FS30ASJ-06F High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1 3 Applications Motor control, lamp control, solenoid control, DC-DC con.
• Drive voltage : 4 V
• VDSS : 60 V
• rDS(ON) (max) : 22 mΩ
• ID : 30 A
• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns
Outline
RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A)
2, 4
4
12 3
1
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS30ASJ-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS30ASJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS30ASJ-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
4 | FS30AS-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
5 | FS30AS-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
6 | FS30ASH-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
7 | FS3000 |
Renesas |
Air Velocity Sensor | |
8 | FS300R12KE3 |
Eupec |
IGBT | |
9 | FS300R12KE3 |
Infineon |
IGBT-Module | |
10 | FS300R12KE4 |
Infineon |
IGBT | |
11 | FS300R12KF4 |
eupec GmbH |
IGBT | |
12 | FS300R12OE4 |
Infineon |
IGBT |