MITSUBISHI Nch POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE FS2KM-18A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAIN e SOURCE 1 2 3 2.6 ± 0.2 w ¡VDSS .......
power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 900 ±30 2 6 30
–55 ~ +150
–55 ~ +150 2000 2
Unit V V A A W °C °C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FS2KM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 900V, VGS = 0V ID =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS30ASJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS30ASJ-06F |
Renesas |
N-channel MOSFET | |
3 | FS30ASJ-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
4 | FS30AS-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
5 | FS30AS-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
6 | FS30ASH-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
7 | FS3000 |
Renesas |
Air Velocity Sensor | |
8 | FS300R12KE3 |
Eupec |
IGBT | |
9 | FS300R12KE3 |
Infineon |
IGBT-Module | |
10 | FS300R12KE4 |
Infineon |
IGBT | |
11 | FS300R12KF4 |
eupec GmbH |
IGBT | |
12 | FS300R12OE4 |
Infineon |
IGBT |