FS30AS-06 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING 6.5 5.0 ± 0.2 r Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 5.5 ± 0.2 10MAX. 2.3MIN. 1.0MAX. ¡10V DRIVE ¡VDSS ....... 60V ¡rDS (ON) (MAX) .............
perature Weight
VGS = 0V VDS = 0V L = 100µH
Typical value
Conditions
Ratings 60 ±20 30 120 30 30 120 35
–55 ~ +150
–55 ~ +150
0.26
Unit V V A A A A A W °C °C g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30AS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS30AS-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS30ASH-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS30ASJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
4 | FS30ASJ-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
5 | FS30ASJ-06F |
Renesas |
N-channel MOSFET | |
6 | FS30ASJ-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
7 | FS3000 |
Renesas |
Air Velocity Sensor | |
8 | FS300R12KE3 |
Eupec |
IGBT | |
9 | FS300R12KE3 |
Infineon |
IGBT-Module | |
10 | FS300R12KE4 |
Infineon |
IGBT | |
11 | FS300R12KF4 |
eupec GmbH |
IGBT | |
12 | FS300R12OE4 |
Infineon |
IGBT |