These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• -13.2A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
G GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQPF22P10 -100 -13.2 -9.3 -52.8 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQPF22N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
2 | FQPF22N50 |
Oucan Semi |
22A N-Channel MOSFET | |
3 | FQPF20N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
4 | FQPF20N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET | |
5 | FQPF20N60 |
Oucan Semi |
20A N-Channel MOSFET | |
6 | FQPF27N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
7 | FQPF27P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
8 | FQPF27P06 |
ON Semiconductor |
P-Channel MOSFET | |
9 | FQPF28N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
10 | FQPF2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
11 | FQPF2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
12 | FQPF2N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |