This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 14 A, 250 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 7 A
• Low Gate Charge (Typ. 50 nC)
• Low Crss (Typ. 45 pF)
• 100% Avalanche Tested
D
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Stor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQPF27P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
2 | FQPF27P06 |
ON Semiconductor |
P-Channel MOSFET | |
3 | FQPF20N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
4 | FQPF20N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET | |
5 | FQPF20N60 |
Oucan Semi |
20A N-Channel MOSFET | |
6 | FQPF22N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
7 | FQPF22N50 |
Oucan Semi |
22A N-Channel MOSFET | |
8 | FQPF22P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
9 | FQPF28N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
10 | FQPF2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
11 | FQPF2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
12 | FQPF2N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |