FQP45N15V2 - Fairchild Semiconductor

FQP45N15V2 150V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

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• 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
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● G! G DS TO-220 FQP GD S TO-220F FQPF ! S Absolute Maximum Ratings Symbol VDSS ID www.DataSheet4U.com IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP45N15V2 45 31 180 FQPF45N15V2 150 45
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* 180
* ± 30 Units V A A A V mJ A mJ V/ns W W/°C.