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FQD2N100 |
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| Part Number | FQD2N100 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A • Low Gate Charge ( Typ. 12 nC) • Low Crss ( Typ. 5 pF) • 100% Avalanche Tested • RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/... |
| Document |
 FQD2N100 Data Sheet
PDF 0.97MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQD2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 2 | FQD2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 3 | FQD2N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 4 | FQD2N50B |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 5 | FQD2N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|