FQA90N15_F109 - Fairchild Semiconductor

FQA90N15_F109 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

• RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A
• Low Gate Charge (Typ. 220 nC)
• Low Crss (Typ. 200 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Memperature Rating July 2015 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such a.