These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well su.
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• -10.5A, -250V, RDS(on) = 0.62Ω @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-3P
FQA Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA9P25 -250 -10.5 -6.6 -42 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA90N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
2 | FQA90N08 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | FQA90N15 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
4 | FQA90N15-F109 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FQA90N15_F109 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FQA9N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
7 | FQA9N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
8 | FQA9N90-F109 |
ON Semiconductor |
N-Channel MOSFET | |
9 | FQA9N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
10 | FQA9N90C-F109 |
ON Semiconductor |
N-Channel QFET MOSFET | |
11 | FQA9N90C_F109 |
Fairchild Semiconductor |
MOSFET | |
12 | FQA9N90_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET |