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FQA90N15_F109 |
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| Part Number | FQA90N15_F109 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A • Low Gate Charge (Typ. 220 nC) • Low Crss (Typ. 200 pF) • 100% Avalanche Tested • 175°C Maximum Junction Memperature Rating July 2015 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such a... |
| Document |
 FQA90N15_F109 Data Sheet
PDF 1.15MB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQA90N15-F109 |
ON Semiconductor |
N-Channel MOSFET |
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| 2 | FQA90N15 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
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| 3 | FQA90N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET |
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| 4 | FQA90N08 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 5 | FQA9N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
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