These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are w.
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• -55A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-3P
FQA Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA47P06 -60 -55 -38.9 -220 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA40N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
2 | FQA44N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
3 | FQA44N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
4 | FQA44N10100 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
5 | FQA44N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
6 | FQA46N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
7 | FQA48N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
8 | FQA020ADC-007-M |
TDK-Lambda |
EMC Filters | |
9 | FQA020ADC-007-S |
TDK-Lambda |
EMC Filters | |
10 | FQA020ADC-N07-S |
TDK-Lambda |
EMC Filters | |
11 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |