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FQA47P06 |
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| Part Number | FQA47P06 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • -55A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating S ! ● ● G! ▶ ▲ ● G DS TO-3P FQA Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA47P06 -60 -55 -38.9 -220 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A ... |
| Document |
 FQA47P06 Data Sheet
PDF 717.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQA40N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET |
|
| 2 | FQA44N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET |
|
| 3 | FQA44N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
|
| 4 | FQA44N10100 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
|
| 5 | FQA44N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|