These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suit.
•
•
•
•
•
•
• 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
!
"
G! G DS
! "
" "
TO-3P
FQA Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA44N10 100 48 34 192 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA44N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
2 | FQA44N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
3 | FQA44N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
4 | FQA40N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
5 | FQA46N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
6 | FQA47P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
7 | FQA48N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
8 | FQA020ADC-007-M |
TDK-Lambda |
EMC Filters | |
9 | FQA020ADC-007-S |
TDK-Lambda |
EMC Filters | |
10 | FQA020ADC-N07-S |
TDK-Lambda |
EMC Filters | |
11 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |