These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 170A, 60V, RDS(on) = 0.0056Ω @VGS = 10 V Low gate charge ( typical 220 nC) Low Crss ( typical 620 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-3P
FQA Series
TC = 25°C unless otherwise noted
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA170N06 60 170 120 680 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA17N40 |
Fairchild Semiconductor |
MOSFET | |
2 | FQA17P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
3 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
4 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
5 | FQA10N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
6 | FQA10N80C-F109 |
ON Semiconductor |
N-Channel QFET MOSFET | |
7 | FQA10N80C_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET | |
8 | FQA11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
9 | FQA11N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
10 | FQA11N90 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | FQA11N90-F109 |
ON Semiconductor |
N-Channel MOSFET | |
12 | FQA11N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET |