FQA170N06 |
Part Number | FQA170N06 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • 170A, 60V, RDS(on) = 0.0056Ω @VGS = 10 V Low gate charge ( typical 220 nC) Low Crss ( typical 620 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series TC = 25°C unless otherwise noted ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA170N06 60 170 120 680 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m... |
Document |
FQA170N06 Data Sheet
PDF 650.39KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQA17N40 |
Fairchild Semiconductor |
MOSFET | |
2 | FQA17P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
3 | FQA10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
4 | FQA10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
5 | FQA10N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET |