Technische Information / Technical Information IGBT-Module IGBT-Modules FP75R12KE3 Vorläufige Daten Preliminary data Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Gleichrichter Ausgang Grenzeffektivst.
itter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I 2t - value Tc = 80 °C TC = 25 °C tP = 1 ms, TC = 25°C TC = 80 °C VCES I C,nom. IC I CRM Ptot VGES 1200 75 105 150 350 +/- 20V V A A A W V Tc = 80 °C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF I FRM I t 2 75 150 1.190 A A As 2 Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer .
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP75R12KE3 IGBT,Wechselrichter/IGBT,Inverte.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FP75R12KT3 |
eupec GmbH |
IGBT-inverter | |
2 | FP75R12KT3 |
Infineon |
IGBT | |
3 | FP75R12KT4 |
Infineon |
IGBT | |
4 | FP75R12KT4P |
Infineon |
IGBT | |
5 | FP75R12KT4P_B11 |
Infineon |
IGBT | |
6 | FP75R12KT4_B11 |
Infineon |
IGBT-Module | |
7 | FP75R12KT4_B15 |
Infineon |
IGBT-Module | |
8 | FP75R17N3E4 |
Infineon |
IGBT | |
9 | FP75R17N3E4_B11 |
Infineon |
IGBT | |
10 | FP75R06KE3 |
Infineon |
IGBT | |
11 | FP75R07N2E4 |
Infineon |
IGBT | |
12 | FP750SOT343 |
Filtronic Compound Semiconductors |
PACKAGED LOW NOISE/ MEDIUM POWER PHEMT |