FP750SOT343 - Filtronic Compound Semiconductors

FP750SOT343 PACKAGED LOW NOISE/ MEDIUM POWER PHEMT

AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The FP750’s active areas are passivate.

Features

♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency
• DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The FP750’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-perfor.