FP75R06KE3 - Infineon

FP75R06KE3 IGBT

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP75R06KE3 EconoPIM™3ModulmitTrench/FeldstopIGBT³undEmitterControlled3Diode EconoPIM™3modulewiththetrench/fieldstopIGBT³andEmitterControlled3diode VorläufigeDaten IGBT,Wechselrichter/IGBT,Inverter PreliminaryData HöchstzulässigeWerte/MaximumRatedValu.

Features

GE = 15 V IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,20 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterle.