TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP10R12W1T4_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C .
= VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 10 A, VCE = 600 V VGE .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FP10R12W1T4_B3 |
Infineon |
IGBT | |
2 | FP10R12W1T4P |
Infineon |
IGBT | |
3 | FP10R12W1T4P_B11 |
Infineon |
IGBT | |
4 | FP10R12W1T4 |
Infineon |
IGBT | |
5 | FP10R12W1T7 |
Infineon |
IGBT | |
6 | FP10R12W1T7_B11 |
Infineon |
IGBT | |
7 | FP10R12W1T7_B3 |
Infineon |
IGBT-Module | |
8 | FP10R12KE3 |
Eupec GmbH |
IGBT Modules | |
9 | FP10R12YT3 |
Eupec GmbH |
IGBT Modules | |
10 | FP10R06KL4 |
ETC |
Elektrische Eigenschaften / Electrical properties | |
11 | FP100 |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT | |
12 | FP1000 |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES |