AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier.
♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz
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DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.)
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation. T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FP1000 |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES | |
2 | FP1000A |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES | |
3 | FP1005R |
EATON |
High current power inductors | |
4 | FP1006 |
EATON |
High current power inductors | |
5 | FP1007 |
EATON |
High current power inductors | |
6 | FP1007R6 |
EATON |
High current power inductors | |
7 | FP1009 |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES | |
8 | FP1009A |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES | |
9 | FP100F |
VMI |
Spice Model | |
10 | FP100R06KE3 |
eupec GmbH |
IGBT | |
11 | FP100R06KE3 |
Infineon |
IGBT | |
12 | FP100R07N3E4 |
Infineon |
IGBT |