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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP100R06KE3 EconoPIM™3ModulmitschnellemTrench/FeldstoppIGBT³undEmitterControlled3Diode EconoPIM™3modulewithfasttrench/fiedstopIGBT³andEmitterControlled3diode VorläufigeDaten IGBT,Wechselrichter/IGBT,Inverter PreliminaryData HöchstzulässigeWerte/Maximum.
= 15 V IC = 100 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,60 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V.
FP100R06KE3 - eupec GmbH
www.DataSheet.co.kr Technische Information / technical information IGBT-Module IGBT-modules FP100R06KE3 Vorläufige Dat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FP100R07N3E4 |
Infineon |
IGBT |
|
| 2 | FP100R07N3E4_B11 |
Infineon |
IGBT |
|
| 3 | FP100R12KT4 |
Infineon Technologies |
IGBT-Module |
|
| 4 | FP100R12KT4_B11 |
Infineon |
IGBT-Module |
|
| 5 | FP100 |
Filtronic Compound Semiconductors |
HIGH PERFORMANCE PHEMT |
|
| 6 | FP1000 |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES |
|
| 7 | FP1000A |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES |
|
| 8 | FP1005R |
EATON |
High current power inductors |
|
| 9 | FP1006 |
EATON |
High current power inductors |
|
| 10 | FP1007 |
EATON |
High current power inductors |
|
| 11 | FP1007R6 |
EATON |
High current power inductors |
|
| 12 | FP1009 |
ETC |
(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES |
|