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The FNK02N08E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application. Product Summary VDS (V) = 20V ID = 20A RDS(ON) < 7.5mΩ (VGS = 4.5V) RDS(ON) < 12mΩ (VGS = 2.5V) 1.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FNK02N08S |
FNK |
N-Channel Power MOSFET |
|
| 2 | FNK02N09S |
FNK |
N-Channel Power MOSFET |
|
| 3 | FNK0203E |
FNK |
N-Channel Power MOSFET |
|
| 4 | FNK0203EA |
FNK |
N-Channel Power MOSFET |
|
| 5 | FNK0203EB |
FNK |
N-Channel Power MOSFET |
|
| 6 | FNK01N01D |
FNK |
N-Channel Power MOSFET |
|
| 7 | FNK01N08 |
FNK |
N-Channel Power MOSFET |
|
| 8 | FNK01N15 |
FNK |
N-Channel Power MOSFET |
|
| 9 | FNK01N15D |
FNK |
N-Channel Power MOSFET |
|
| 10 | FNK01N15T |
FNK |
N-Channel Power MOSFET |
|
| 11 | FNK01N17 |
FNK |
N-Channel Power MOSFET |
|
| 12 | FNK01N17T |
FNK |
N-Channel Power MOSFET |
|