Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP.
FMH13N60ES Outline Drawings [mm] TO-3P(Q) FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Equivalent circuit schematic Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Descrip.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FMH11N90E |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
2 | FMH16N50ES |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
3 | FMH16N60ES |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
4 | FMH17N60ES |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
5 | FMH19N60E |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
6 | FMH19N60ES |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
7 | FMH-12R |
Sanken electric |
Ultra-Fast-Recovery Rectifier Diodes | |
8 | FMH06N90E |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
9 | FMH07N90E |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
10 | FMH07N90E |
INCHANGE |
N-Channel MOSFET | |
11 | FMH08N80E |
INCHANGE |
N-Channel MOSFET | |
12 | FMH09N90E |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |