FMH08N80E - INCHANGE

FMH08N80E N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.45Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS · generally applied in high efficiency switch mode power supplies. ·ABSO.

Features

·Drain Current ID= 8A@ TC=25℃
·Drain Source Voltage- : VDSS= 800V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 1.45Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
· generally applied in high efficiency switch mode power supplies.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 270 W Tj Max. Operating Junct.