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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMH09N90E ·FEATURES ·With TO-3PN packaging ·Low on-resistance ·Low drive current ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAX.
·With TO-3PN packaging
·Low on-resistance
·Low drive current
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
·DC-DC converters
·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
900
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
9
IDM
Drain Current-Single Pulsed
36
PD
Total Dissipation
202
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THE.
FMH09N90E - Fuji Electric
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Max.
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