FMBA14 - Fairchild Semiconductor

FMBA14 NPN Multi-Chip Darlington Transistor

FMBA14 Discrete POWER & Signal Technologies FMBA14 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT™-6 Mark: .1N NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Volta.

Features

Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMBA14 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMBA14 NPN Multi-Chip Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CES ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 100 µA, IB = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 100 100 V nA nA ON CHARACTERISTICS
* hFE VCE(sat) VBE(on) DC Current.