FMBA0656 Discrete Power & Signal Technologies FMBA0656 C2 E1 C1 Package: SuperSOT-6 Device Marking: .003 Note: The " . " (dot) signifies Pin 1 B2 E2 B1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at coll.
ollector to Base Voltage Emitter to Base Voltage TA = 25°C unless otherwise noted Test Conditions Ic = 1.0 mA Ic = 100 uA Ie = 100 uA Min 80 80 4 Max Units V V V © 1997 Fairchild Semiconductor Corporation Page 1 of 2 fmba0656.lwpPr33&73(Y3) FMBA0656 NPN & PNP Complementary Dual Transistor (continued) Electrical Characteristics Symbol ICBO ICEO hFE VCE(sat) VBE(on) Parameter Collector Cutoff Current Collector Cutoff Current DC Current Gain TA = 25°C unless otherwise noted Test Conditions Vcb = 80 V Vce = 60 V Vce = 1 V, Ic = 10 mA Vce = 1 V, Ic = 100 mA Min Max 100 100 Units nA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FMBA06 |
Fairchild Semiconductor |
NPN Multi-Chip General Purpose Amplifier | |
2 | FMBA14 |
Fairchild Semiconductor |
NPN Multi-Chip Darlington Transistor | |
3 | FMBA56 |
Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier | |
4 | FMB-22H |
Sanken electric |
Schottky Barrier Diodes 20V | |
5 | FMB-22L |
Sanken electric |
Schottky Barrier Diodes 20V | |
6 | FMB-2306 |
Sanken electric |
Schottky Diode | |
7 | FMB-24 |
Sanken electric |
Silicon Schottky Barrier Diode | |
8 | FMB-24H |
Sanken electric |
Silicon Schottky Barrier Diode | |
9 | FMB-24L |
Sanken electric |
Silicon Schottky Barrier Diode | |
10 | FMB-24M |
Sanken electric |
SILICON SCHOTTKY BARRIER DIODE | |
11 | FMB-26 |
Sanken electric |
Schottky Barrier Diodes 60V | |
12 | FMB-26L |
Sanken electric |
Schottky Barrier Diodes 60V |