Schottky Barrier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot 60V Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g) 1 Chip A IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C Tj (°C) Tstg (°C) VF (V) max per element trr (ns) IF /IRP (mA) max.
newave 0 60 80 100 120 140 0.01 0 0.2 0.4 Ta = 125ºC 100ºC 60ºC 26ºC 0.6 0.8 1.0 1.2 1.4 10 0.01 0.005 0 10 20 30 40 50 0 1 5 10 50 Case Temperature Tc (°C) Forward Voltage VF (V) Reverse Voltage VR (V) Overcurrent Cycles FMB-26 5 Tc—IF(AV) Derating VR =60V VF —I F Characteristics (Typical) 50 50 VR —I R Characteristics (Typical) I FSM (A) 40 I FMS Rating I FSM (A) Average Forward Current I F (AV) (A) Reverse Current IR (mA) D.C. Forward Current IF (A) 4 10 10 Ta = 125ºC 100ºC 20ms 3 t /T = 1/6 1 60ºC 0.1 25ºC 1 Peak Forward Surge Current 60 70 80 30 20 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FMB-26 |
Sanken electric |
Schottky Barrier Diodes 60V | |
2 | FMB-22H |
Sanken electric |
Schottky Barrier Diodes 20V | |
3 | FMB-22L |
Sanken electric |
Schottky Barrier Diodes 20V | |
4 | FMB-2306 |
Sanken electric |
Schottky Diode | |
5 | FMB-24 |
Sanken electric |
Silicon Schottky Barrier Diode | |
6 | FMB-24H |
Sanken electric |
Silicon Schottky Barrier Diode | |
7 | FMB-24L |
Sanken electric |
Silicon Schottky Barrier Diode | |
8 | FMB-24M |
Sanken electric |
SILICON SCHOTTKY BARRIER DIODE | |
9 | FMB-29 |
Sanken electric |
Schottky Barrier Diodes 90V | |
10 | FMB-29L |
Sanken electric |
Schottky Barrier Diodes | |
11 | FMB-32 |
Sanken electric |
Schottky Barrier Diodes 20V | |
12 | FMB-32M |
Sanken electric |
Schottky Barrier Diodes 20V |