FFB3906 / FMB3906 / MMPQ3906 FFB3906 E2 B2 C1 FMB3906 C2 E1 C1 E1 MMPQ3906 E2 B2 E3 B3 E4 B4 B1 SC70-6 Mark: .2A pin #1 C2 B1 E1 pin #1 B1 B2 E2 C2 C1 C3 C2 C4 C4 C3 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Super.
evice may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB3904 300 2.4 415 Max FMB3904 700 5.6 180 MMPQ3904 1,000 8.0 125 240 Units mW mW/°C °C/W °C/W °C/W 1998 Fairchild Semiconductor Corporation FFB3906 / FMB390.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FMB3904 |
Fairchild Semiconductor |
NPN General Purpose Amplifier | |
2 | FMB3946 |
Fairchild Semiconductor |
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package | |
3 | FMB-22H |
Sanken electric |
Schottky Barrier Diodes 20V | |
4 | FMB-22L |
Sanken electric |
Schottky Barrier Diodes 20V | |
5 | FMB-2306 |
Sanken electric |
Schottky Diode | |
6 | FMB-24 |
Sanken electric |
Silicon Schottky Barrier Diode | |
7 | FMB-24H |
Sanken electric |
Silicon Schottky Barrier Diode | |
8 | FMB-24L |
Sanken electric |
Silicon Schottky Barrier Diode | |
9 | FMB-24M |
Sanken electric |
SILICON SCHOTTKY BARRIER DIODE | |
10 | FMB-26 |
Sanken electric |
Schottky Barrier Diodes 60V | |
11 | FMB-26L |
Sanken electric |
Schottky Barrier Diodes 60V | |
12 | FMB-29 |
Sanken electric |
Schottky Barrier Diodes 90V |