FFB3904 / FMB3904 / MMPQ3904 Discrete POWER & Signal Technologies FFB3904 E2 B2 C1 FMB3904 C2 E1 C1 E1 C2 MMPQ3904 E2 B2 E3 B3 E4 B4 B1 B1 pin #1 B2 E2 pin #1 B1 E1 SC70-6 Mark: .1A SuperSOT™-6 Mark: .1A SOIC-16 C1 C2 C1 C3 C2 C4 C4 C3 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful .
. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB3904 300 2.4 415 Max FMB3904 700 5.6 180 MMPQ3904 1,000 8.0 125 240 Units mW mW/°C °C/W °C/W °C/W © 1998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise n.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FMB3906 |
Fairchild Semiconductor |
PNP Multi-Chip General Purpose Amplifier | |
2 | FMB3946 |
Fairchild Semiconductor |
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package | |
3 | FMB-22H |
Sanken electric |
Schottky Barrier Diodes 20V | |
4 | FMB-22L |
Sanken electric |
Schottky Barrier Diodes 20V | |
5 | FMB-2306 |
Sanken electric |
Schottky Diode | |
6 | FMB-24 |
Sanken electric |
Silicon Schottky Barrier Diode | |
7 | FMB-24H |
Sanken electric |
Silicon Schottky Barrier Diode | |
8 | FMB-24L |
Sanken electric |
Silicon Schottky Barrier Diode | |
9 | FMB-24M |
Sanken electric |
SILICON SCHOTTKY BARRIER DIODE | |
10 | FMB-26 |
Sanken electric |
Schottky Barrier Diodes 60V | |
11 | FMB-26L |
Sanken electric |
Schottky Barrier Diodes 60V | |
12 | FMB-29 |
Sanken electric |
Schottky Barrier Diodes 90V |