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MITSUBISHI Nch POWER MOSFET FK10UM-12 HIGH-SPEED SWITCHING USE FK10UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ..... 600V ¡rDS (ON) (MAX).
±30 10 30 10 30 150
–55 ~ +150
–55 ~ +150 2.0
Unit V V A A A A W °C °C g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10UM-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ±30 — — 2 — — 4.5 — — — — — — — — — — Typ. — — .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FK10UM-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 2 | FK10UM-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 3 | FK1001-7R |
Power-One |
150 Watt DC-DC Converters |
|
| 4 | FK10KM-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 5 | FK10KM-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 6 | FK10KM-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 7 | FK10SM-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 8 | FK10SM-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 9 | FK10SM-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 10 | FK10VS-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 11 | FK10VS-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 12 | FK10VS-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|