MITSUBISHI Nch POWER MOSFET FK10SM-9 HIGH-SPEED SWITCHING USE FK10SM-9 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ..... 450V ¡rDS (ON) (MAX) ............
30 125
–55 ~ +150
–55 ~ +150 4.8
Unit V V A A A A W °C °C g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 450 ±30 — — 2 — — 3.3 — — — — — — — — — — Typ. — — — — 3 0.70 3.5.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FK10SM-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
2 | FK10SM-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
3 | FK1001-7R |
Power-One |
150 Watt DC-DC Converters | |
4 | FK10KM-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
5 | FK10KM-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
6 | FK10KM-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
7 | FK10UM-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
8 | FK10UM-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
9 | FK10UM-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
10 | FK10VS-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
11 | FK10VS-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE | |
12 | FK10VS-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |