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MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE FK10KM-9 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAIN e SOURCE 1 2 3 2.6 ± 0.2 w ¡VDSS .........
rce current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 450 ±30 10 30 10 30 35
–55 ~ +150
–55 ~ +150 2000 2.0
Unit V V A A A A W °C °C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FK10KM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FK10KM-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 2 | FK10KM-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 3 | FK1001-7R |
Power-One |
150 Watt DC-DC Converters |
|
| 4 | FK10SM-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 5 | FK10SM-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 6 | FK10SM-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 7 | FK10UM-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 8 | FK10UM-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 9 | FK10UM-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 10 | FK10VS-10 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 11 | FK10VS-12 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|
| 12 | FK10VS-9 |
Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE |
|