FJV3115R - Fairchild Semiconductor

FJV3115R NPN Epitaxial Silicon Transistor

FJV3115R FJV3115R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ) 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R35 R1 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted .

Features

Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µΑ VCE=0.3V, IC=20mA 1.5 0.20 2.2 0.22 0.3 3 2.9 0.25 250 3.7 33 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV3115R Typical Characteristics 10 1000 VCE = 5V R1 = 2.2K R2 = 10K VCE = 5V R1 = 2.2K R2 = 10K 100 VI(on)[V], INPUT VOLTAGE 1 10 100 1000 hFE, DC CURRENT GAIN 1 10 0.1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR C.