FJNS4213R - Fairchild Semiconductor

FJNS4213R PNP Epitaxial Silicon Transistor

FJNS4213R FJNS4213R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to FJNS3213R 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO I.

Features

ltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.2V, IC= -10mA 1.5 0.042 2.2 0.047 -0.5 -1.1 2.9 0.052 200 5.5 68 -0.3 V MHz pF V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJNS4213R Package Dimensions TO-92S 4.00 ±0.20 2.31 ±0.20 0.66 MAX. (1.10) 0.49 ±0.10 1.27TYP [1.27±0.20] 3.72 ±0.20 1.27TYP [1.27±0.20] 14.47 ±0.30 3.70 ±0.20 0.35
  –0.05 +0.10 2.86 .