FJNS4207R - Fairchild Semiconductor

FJNS4207R PNP Epitaxial Silicon Transistor

FJNS4207R FJNS4207R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to FJNS3207R 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC.

Features

ltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA 15 0.42 22 0.47 -0.4 -2.5 29 0.52 5.5 200 68 -0.3 V pF MHz V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJNS4207R Typical Characteristics 1000 VCE = - 5V R1 = 22K R2 = 47K -100 VCE =- 0.3V R1 = 22K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 100 -10 10 -1 1 -0.1 -1 -10 -100 -0.1.