FJNS4210R - Fairchild Semiconductor

FJNS4210R PNP Epitaxial Silicon Transistor

FJNS4210R FJNS4210R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10KΩ) • Complement to FJNS3210R 1 TO-92S 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TST.

Features

-30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA 7 5.5 200 10 13 100 Min. -40 -40 -0.1 600 -0.3 V pF MHz KΩ Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJNS4210R Typical Characteristics 10k -1000 VCE(sat)[mV], SATURATION VOLTAGE VCE = - 5V R = 10K IC = 10IB R = 10k hFE, DC CURRENT GAIN 1k -100 100 -10 10 -0.1 -1 -1 -10 -100 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation 350 300 PC[mW], POWER DISSIPAT.