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FJBE2150D - Fairchild Semiconductor

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FJBE2150D NPN Silicon Transistor

The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ s.

Features

(FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv. RCS(ON) 0.261 Ω(1)
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Squared RBSOA: Up to 1500 V
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance Typ. 12 pF Capacitance at 200 V)
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to High dv/dt Transients Applications
• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascode (ESBC™)
• Smart Meters, Smart Breakers, HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers Description The FJBE2150D is a low-cos.

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