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EcoSPARK) 2 N-Channel Ignition IGBT 335 mJ, 400 V FGD3440G2-F085V Features • SCIS Energy = 335 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (T.
• SCIS Energy = 335 mJ at TJ = 25°C
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Application
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA)
400
V
BVECS Emitter to Collector Voltage − Reverse
28
V
Battery Condition (IC = 10 mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
335
mJ
ESCIS150 Self Clamping Inductiv.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGD3440G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 2 | FGD3440G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 3 | FGD3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 4 | FGD3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGD3040G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 6 | FGD3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 7 | FGD3050G2 |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGD3050G2V |
ON Semiconductor |
N-Channel IGBT |
|
| 9 | FGD3245G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 10 | FGD3245G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 11 | FGD3245G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 12 | FGD3245G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|