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FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT April 2015 Features SCIS Energy = 330mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Package GATE EMITTER C.
SCIS Energy = 330mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2015 Fairchild Semiconductor Corporation FGD3325G2_F085 Rev. 1.0 1 www.fairchildsemi.com FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGD3325G2-F085 |
ON Semiconductor |
N-Channel Ignition IGBT |
|
| 2 | FGD3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 3 | FGD3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 4 | FGD3040G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGD3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 6 | FGD3050G2 |
ON Semiconductor |
N-Channel IGBT |
|
| 7 | FGD3050G2V |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGD3245G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 9 | FGD3245G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 10 | FGD3245G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 11 | FGD3245G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 12 | FGD3440G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|