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FGD2736G3-F085V EcoSPARK) 3 Ignition IGBT 270 mJ, 360 V, N−Channel Ignition IGBT Features • SCIS Energy = 270 mJ at TJ = 25°C • Logic Level Gate Drive • Low Saturation Voltage • RoHS Compliant • AEC−Q101 Qualified and PPAP Capable Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications MAXIMUM RA.
• SCIS Energy = 270 mJ at TJ = 25°C
• Logic Level Gate Drive
• Low Saturation Voltage
• RoHS Compliant
• AEC−Q101 Qualified and PPAP Capable
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Parameter
Value
Units
BVCER Collector−to−Emitter Breakdown Voltage (IC = 1 mA)
BVECS Emitter−to−Collector Voltage − Reverse Battery Condition (IC = 10 mA)
ESCIS25 ISCIS = 13.4 A, L = 3.0 mHy, RGE = 1 KW TC = 25°C (Note 1)
ESCIS150 ISCIS = 10.8 A, L = 3.0 mHy, RGE = 1 KW TC =.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGD2736G3-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 2 | FGD2040G3-F085 |
ON Semiconductor |
IGBT |
|
| 3 | FGD2N40L |
Fairchild Semiconductor |
400V N-Channel Logic Level IGBT |
|
| 4 | FGD3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGD3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 6 | FGD3040G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|
| 7 | FGD3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 8 | FGD3050G2 |
ON Semiconductor |
N-Channel IGBT |
|
| 9 | FGD3050G2V |
ON Semiconductor |
N-Channel IGBT |
|
| 10 | FGD3245G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 11 | FGD3245G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 12 | FGD3245G2-F085V |
ON Semiconductor |
N-Channel IGBT |
|