Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for hig.
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon
• Soft Recovery Diode
IGBT (co-pack) formerly Developmental Type TA49332 (Diode formerly Developmental Type TA49469)
Package
TO-247
E C G
Symbol
C
TO-220AB
E C G
TO-263AB
G
G E E
Device Maximum Ratings TC= 25°C unless otherw.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGB20N6S2 |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT |
|
| 2 | FGB20N60SF |
Fairchild Semiconductor |
20A Field Stop IGBT |
|
| 3 | FGB20N60SFD |
Fairchild Semiconductor |
IGBT |
|
| 4 | FGB20N60SFD-F085 |
ON Semiconductor |
IGBT |
|
| 5 | FGB20N60SFD_F085 |
Fairchild Semiconductor |
20A Field Stop IGBT |
|
| 6 | FGB3040CS |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 7 | FGB3040CS |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGB3040G2-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 9 | FGB3040G2-F085C |
ON Semiconductor |
N-Channel IGBT |
|
| 10 | FGB3040G2_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT |
|
| 11 | FGB3056-F085 |
ON Semiconductor |
N-Channel IGBT |
|
| 12 | FGB30N6S2 |
Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT |
|