FGA25S125P - ON Semiconductor

FGA25S125P 25A Shorted-anode IGBT

Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven. C G CE .

Features

• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
• High Input Impedance
• RoHS Compliant Applications
• Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven. C G CE TO-3PN Absolute Maximum Ratings Symbol VCES VGES .