Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. GCE TO-3P Absolute Maximum Ratings Sy.
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25C
• Extremely Enhanced Avalanche Capability
Applications
• Induction Heating, Microwave Oven
Description
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction he.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FGA25N120ANTDTU |
Fairchild Semiconductor |
IGBT | |
2 | FGA25N120ANTDTU |
ON Semiconductor |
NPT Trench IGBT | |
3 | FGA25N120ANTDTU-F109 |
ON Semiconductor |
NPT Trench IGBT | |
4 | FGA25N120ANTD_F109 |
Fairchild Semiconductor |
25A NPT Trench IGBT | |
5 | FGA25N120AN |
Fairchild Semiconductor |
IGBT | |
6 | FGA25N120AND |
Fairchild Semiconductor |
IGBT | |
7 | FGA25N120 |
ON Semiconductor |
NPT Trench IGBT | |
8 | FGA25N120FTD |
Fairchild Semiconductor |
Field Stop Trench IGBT | |
9 | FGA25S125P |
Fairchild Semiconductor |
IGBT | |
10 | FGA25S125P |
ON Semiconductor |
25A Shorted-anode IGBT | |
11 | FGA20N120FTD |
Fairchild Semiconductor |
20A Trench IGBT | |
12 | FGA20S120M |
Fairchild Semiconductor |
20A Shorted-Anode IGBT |