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Using advanced field stop trench technology, Fairchild®’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven. C GCE TO-3P Absolute Maximum Ratings S.
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A
• High Input Impedance
• RoHS Complaint
Applications
• Induction Heating, Microvewave Oven
General Description
Using advanced field stop trench technology, Fairchild®’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES VGES IC
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGA25N120 |
ON Semiconductor |
NPT Trench IGBT |
|
| 2 | FGA25N120AN |
Fairchild Semiconductor |
IGBT |
|
| 3 | FGA25N120AND |
Fairchild Semiconductor |
IGBT |
|
| 4 | FGA25N120ANTD |
Fairchild Semiconductor |
NPT Trench IGBT |
|
| 5 | FGA25N120ANTDTU |
Fairchild Semiconductor |
IGBT |
|
| 6 | FGA25N120ANTDTU |
ON Semiconductor |
NPT Trench IGBT |
|
| 7 | FGA25N120ANTDTU-F109 |
ON Semiconductor |
NPT Trench IGBT |
|
| 8 | FGA25N120ANTD_F109 |
Fairchild Semiconductor |
25A NPT Trench IGBT |
|
| 9 | FGA25S125P |
Fairchild Semiconductor |
IGBT |
|
| 10 | FGA25S125P |
ON Semiconductor |
25A Shorted-anode IGBT |
|
| 11 | FGA20N120FTD |
Fairchild Semiconductor |
20A Trench IGBT |
|
| 12 | FGA20S120M |
Fairchild Semiconductor |
20A Shorted-Anode IGBT |
|