The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690S a.
• 10 A, 30 V. RDS(ON) = 0.016 Ω @ V GS = 10 V RDS(ON) = 0.024 Ω @ V GS = 4.5 V
• Includes SyncFET Schottky diode
• Low gate charge (11 nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
Applications
• DC/DC converter
• Motor drives
D D D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
T A=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
10 50 2.5 1.2 1 -55 to +150
Power Dis.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6690 |
Fairchild Semiconductor |
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
2 | FDS6690A |
Fairchild Semiconductor |
Single N-Channel / Logic Level / PowerTrench MOSFET | |
3 | FDS6690A |
ON Semiconductor |
N-Channel MOSFET | |
4 | FDS6690AS |
Fairchild Semiconductor |
30V N-Channel PowerTrench SyncFET | |
5 | FDS6690AS |
ON Semiconductor |
N-Channel MOSFET | |
6 | FDS6692 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET | |
7 | FDS6692A |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
8 | FDS6694 |
Fairchild Semiconductor |
30V N-Channel Fast Switching PowerTrench MOSFET | |
9 | FDS6699S |
Fairchild Semiconductor |
MOSFET | |
10 | FDS6699S |
ON Semiconductor |
N-Channel MOSFET | |
11 | FDS6609A |
Fairchild Semiconductor |
P-Channel Logic Level PowerTrench MOSFET | |
12 | FDS6612A |
Fairchild Semiconductor |
PowerTrench MOSFET |