FDS6690A - Fairchild Semiconductor

FDS6690A Single N-Channel / Logic Level / PowerTrench MOSFET

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching .

Features

• 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability DD DDDD DD SO-8 Pin 1 SO-8 SS SS SS GG 54 63 72 81 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) EAS TJ, TSTG Single Pulse Avalanche Energy (Note 3) Operating an.