FDS6576 - Fairchild Semiconductor

FDS6576 P-Channel MOSFET

Features This P-Channel 2.5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Applications • Load switch • Battery protection • Power management  –11 A, –20 V. RDS(ON) = 0.014 : @ VGS = –4..

Features

This P-Channel 2.5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Applications
• Load switch
• Battery protection
• Power management 
  –11 A,
  –20 V. RDS(ON) = 0.014 : @ VGS =
  –4.5 V  RDS(ON) = 0.020 : @ VGS =
  –2.5 V r
• Extended VGSS range ( 12V) for battery applications.
• Low gate charge (43nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handli.