This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 16 A, 20 V. RDS(ON) = 6 mΩ @ VGS = 4.5 V RDS(ON) = 7 mΩ @ VGS = 2.5 V RDS(ON) = 9 mΩ @ VGS = 1.
16 A, 20 V. RDS(ON) = 6 mΩ @ VGS = 4.5 V RDS(ON) = 7 mΩ @ VGS = 2.5 V RDS(ON) = 9 mΩ @ VGS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
Applications
• DC/DC converter
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±8
(Note 1a)
Units
V V A W
16 80 2.5 1.2 1.0
–55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note.
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6570A |
Fairchild Semiconductor |
Single N-Channel 2.5V Specified PowerTrench MOSFET | |
2 | FDS6570A |
ON Semiconductor |
N-Channel MOSFET | |
3 | FDS6572A |
Fairchild Semiconductor |
20V N-Channel PowerTrench MOSFET | |
4 | FDS6575 |
Fairchild Semiconductor |
P-Channel MOSFET | |
5 | FDS6576 |
Fairchild Semiconductor |
P-Channel MOSFET | |
6 | FDS6064N3 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDS6064N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDS6162N3 |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDS6162N7 |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDS6294 |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | FDS6298 |
Fairchild Semiconductor |
30V N-Channel Fast Switching PowerTrench MOSFET | |
12 | FDS6298 |
ON Semiconductor |
N-Channel MOSFET |