FDS6575 - Fairchild Semiconductor

FDS6575 P-Channel MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wtih a wide range of gate drive voltage (2.5V – 8V). Applications • Power management • Load switch • Battery protection Features • –10 A, –20 V. RDS(ON) = 13 mΩ @ VGS = –4.5 V RDS(ON.

Features

•
  –10 A,
  –20 V. RDS(ON) = 13 mΩ @ VGS =
  –4.5 V RDS(ON) = 17 mΩ @ VGS =
  –2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High current and power handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal.